march 2013 FDD850N10L n-channel powertrench ? mosfet ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDD850N10L unit v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 15.7 a - continuous (t c = 100 o c) 11.1 i dm drain current - pulsed (note 1) 63 a e as single pulsed avalanche energy (note 2) 41 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 50 w - derate above 25 o c0.33w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDD850N10L unit r jc thermal resistance, junction to case, max. 3.0 o c/w r ja thermal resistance, junction to ambient, max. 87 FDD850N10L n-channel powertrench ? mosfet 100 v, 15.7 a, 75 m features ?r ds(on) = 61 m ( typ.) @ v gs = 10 v, i d = 12 a ?r ds(on) = 64 m ( typ.) @ v gs = 5 v, i d = 12 a ? low gate charge ( typ. 22.2 nc) ?low c rss ( typ. 42 pf) ? fast switching ? 100% avalanche tested ? improve dv/dt capability ?rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor ? ?s advanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? consumer appliances ? led tv and monitor ? uninterruptible power supply ? micro solar inverter d-pak g s d d g s
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDD850N10L FDD850N10L d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.0-2.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 12a - 61 75 m v gs = 5v, i d = 12a - 64 96 m g fs forward transconductance v ds = 10v, i d = 15.7a -31-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1100 1465 pf c oss output capacitance - 80 105 pf c rss reverse transfer capacitance - 42 - pf q g(tot) total gate charge at 10v v gs = 10v v ds = 80v i d = 15.7a - 22.2 28.9 nc q g(tot) total gate charge at 5v v gs = 5v - 12.3 16.0 nc q gs gate to source gate charge -3.0-nc q gd gate to drain ?miller? charge - 5.7 - nc t d(on) turn-on delay time v dd = 50v, i d = 15.7a v gs = 5v, r gen = 4.7 (note 4) -1744ns t r turn-on rise time - 21 52 ns t d(off) turn-off delay time - 27 64 ns t f turn-off fall time - 8 26 ns esr equivalent series resistance (g-s) - 1.75 - i s maximum continuous drain to source diode forward current - - 15.7 a i sm maximum pulsed drain to source diode forward current - - 63 a v sd drain to source diode forward voltage v gs = 0v, i sd = 12a - - 1.3 v t rr reverse recovery time v gs = 0v, v ds = 80v, i sd = 15.7a di f /dt = 100a/ s -38-ns q rr reverse recovery charge - 50 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 1mh, i as = 9.1a, r g = 25 , starting t j = 25 c 3. i sd 15.7a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 6.0v 5.0v 3.5v 3.0v 0246 0.1 1 10 100 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 1020304050 0.00 0.04 0.08 0.12 0.16 0.20 *note: t c = 25 o c v gs = 10v v gs = 5v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 10 100 1000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12162024 0 2 4 6 8 10 *note: i d = 15.7a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11 . transient thermal response curve -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 12a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 200 0.01 0.1 1 10 100 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 3 6 9 12 15 18 r jc = 3.0 o c/w v gs = 5v v gs = 10v i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 5v
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD850N10L n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2010 fairchild semiconductor corporation FDD850N10L rev. c0 mechanical dimensions dimensions in millimeters d-pak
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?2010 fairchild semiconductor corporation FDD850N10L rev. c0
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